WML18N50D1B Datasheet and Replacement. Cross Reference Search

WML18N50D1B Datasheet (PDF)

..1. Size:1263K way-on
wmk18n50d1b wml18n50d1b wmj18n50d1b.pdf pdf_icon

WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S

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wml18n50c4 wmo18n50c4 wmk18n50c4 wmn18n50c4 wmm18n50c4 wmj18n50c4.pdf pdf_icon

WML18N50C4, WMO18N5 WM C4 W 50C4, MK18N50CWMN18N50C4, WMM18N50C4, WM C4 MJ18N50C 500V 0.25 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C

8.1. Size:708K way-on
wml18n70em wmk18n70em wmm18n70em wmn18n70em wmp18n70em wmo18n70em.pdf pdf_icon

WML18 WMK18N78N70EM, W 70EM, WMM18N70EM WMN18 WMP18N78N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

8.2. Size:990K way-on
wml18n06ts.pdf pdf_icon

WML18N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionWML18N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features GDSTO-220F V = 60V, I = 18A DS D R