WML18N50D1B MOSFET Datasheet: N-Ch, 500V, 18A. Full specification with pinout and replacement list

WML18N50D1B Specs and Replacement

Type Designator: WML18N50D1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO220F

WML18N50D1B substitution

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WML18N50D1B datasheet

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WMK18N50D1B WML18N50D1B WMJ18N50D1B 500V 18A 0.28 N-ch Power MOSFET Description TO-247 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S G D S G D S ... See More ⇒

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WML18 WMK18N7 8N70EM, W 70EM, WMM18N70EM WMN18 WMP18N7 8N70EM, W 70EM, WMO18N70EM 700V Super Ju MOSFET V 0.24 S unction Power M T Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ... See More ⇒

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WML18N06TS 60V N-Channel Enhancement Mode Power MOSFET Description WML18N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features GDS TO-220F V = 60V, I = 18A DS D R ... See More ⇒