WML18N50D1B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WML18N50D1B
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 44.6 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 40 nC
Время нарастания (tr): 30 ns
Выходная емкость (Cd): 250 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.35 Ohm
Тип корпуса: TO220F
Аналог (замена) для WML18N50D1B
WML18N50D1B Datasheet (PDF)
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