WMK220N20HG3 MOSFET Datasheet: N-Ch, 200V, 78A. Full specification with pinout and replacement list

WMK220N20HG3 Specs and Replacement

Type Designator: WMK220N20HG3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO220

WMK220N20HG3 substitution

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WMK220N20HG3 datasheet

..1. Size:606K way-on
wmk220n20hg3.pdf pdf_icon

WMK220N20HG3 200V N-Channel Enhancement Mode Power MOSFET Description WMK220N20HG3 uses Wayon's 3nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 200V, I = ... See More ⇒

9.1. Size:671K way-on
wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf pdf_icon

WMN22N50C4, WMM22N MJ22N50C N50C4, WM C4 WMO22N50C4, WMK22N ML22N50C N50C4, WM C4 500V n Power MOSFET V 0.22 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM C4... See More ⇒

Detailed specifications: WMK175N10LG4, WMK180N03TS, WMK18N50D1B, WML18N50D1B, WMJ18N50D1B, WMK18P10TS, WMK190N03TS, WMK190N15HG4, AON7403, WMK25N06TS, WMK25N10T1, WMK28N15T2, WMK340N20HG2, WMK4N90D1B, WML4N90D1B, WMM4N90D1B, WMK50N06TS