All MOSFET. WMK220N20HG3 Datasheet

 

WMK220N20HG3 Datasheet and Replacement


   Type Designator: WMK220N20HG3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 37 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO220
 

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WMK220N20HG3 Datasheet (PDF)

 ..1. Size:606K  way-on
 wmk220n20hg3.pdf pdf_icon

WMK220N20HG3

WMK220N20HG3 200V N-Channel Enhancement Mode Power MOSFET DescriptionWMK220N20HG3 uses Wayon's 3nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 200V, I =

 9.1. Size:671K  way-on
 wmn22n50c4 wmm22n50c4 wmj22n50c4 wmo22n50c4 wmk22n50c4 wml22n50c4.pdf pdf_icon

WMK220N20HG3

WMN22N50C4, WMM22N MJ22N50CN50C4, WM C4 WMO22N50C4, WMK22N ML22N50CN50C4, WM C4 500V n Power MOSFETV 0.22 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4

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