WMM4N90D1B PDF and Equivalents Search

 

WMM4N90D1B Specs and Replacement

Type Designator: WMM4N90D1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 116 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO263

WMM4N90D1B substitution

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WMM4N90D1B datasheet

 ..1. Size:1434K  way-on
 wmk4n90d1b wml4n90d1b wmm4n90d1b.pdf pdf_icon

WMM4N90D1B

WMK4N90D1B WML4N90D1B WMM4N90D1B 900V 4A 1.85 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D And it is very robust and RoHS compliant. G G S D S G D S ... See More ⇒

 5.1. Size:1980K  way-on
 wml4n90d1 wmk4n90d1 wmm4n90d1.pdf pdf_icon

WMM4N90D1B

WML4N90D1 WMK4N90D1 WMM4N90D1 900V 4A 2.9 N-ch Power MOSFET Description TO-220F TO-220 TO-263 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G D S G S D S Features Typ.R =2.9... See More ⇒

Detailed specifications: WMK190N15HG4, WMK220N20HG3, WMK25N06TS, WMK25N10T1, WMK28N15T2, WMK340N20HG2, WMK4N90D1B, WML4N90D1B, 60N06, WMK50N06TS, WMK6N90D1, WML6N90D1, WMM6N90D1, WMK75N03T1, WMK7N65D1B, WMH7N65D1B, WML7N65D1B

Keywords - WMM4N90D1B MOSFET specs

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