WML6N90D1 Datasheet and Replacement
Type Designator: WML6N90D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 181 nS
Cossⓘ - Output Capacitance: 123 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220F
WML6N90D1 substitution
WML6N90D1 Datasheet (PDF)
wmk6n90d1 wml6n90d1 wmm6n90d1.pdf

WMK6N90D1 WML6N90D1 WMM6N90D1900V 6A 1.7 N-ch Power MOSFETDescriptionTO-263TO-220 TO-220FWMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.DGG GDDS SSFeatures Typ.R =1.7@V =
wml6n100d1.pdf

WML6N100D1 1000V 6A 2.1 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G V =1050V@T DS jmaxD S Typ.R =2.1@V =10V DS(on)
wmo6n80d1 wml6n80d1.pdf

WMO6N80D1 WML6N80D1800V 6A 2.5 N-ch Power MOSFETDescriptionTO-220FTO-252WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGGrobust and RoHS compliant.DSSFeatures Typ.R =2.5@V =10VDS(on) GS 100%
Datasheet: WMK25N10T1 , WMK28N15T2 , WMK340N20HG2 , WMK4N90D1B , WML4N90D1B , WMM4N90D1B , WMK50N06TS , WMK6N90D1 , BS170 , WMM6N90D1 , WMK75N03T1 , WMK7N65D1B , WMH7N65D1B , WML7N65D1B , WMO7N65D1B , WMK80N04T1 , WMK80N06TS .
Keywords - WML6N90D1 MOSFET datasheet
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