WMH7N65D1B Specs and Replacement
Type Designator: WMH7N65D1B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27.4 nS
Cossⓘ - Output Capacitance: 92 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO251
WMH7N65D1B substitution
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WMH7N65D1B datasheet
wmk7n65d1b wmh7n65d1b wml7n65d1b wmo7n65d1b.pdf
WMK7N65D1B WMH7N65D1B WML7N65D1B WMO7N65D1B 650V 7A 1.12 N-ch Power MOSFET Description TO-220 TO-220F TAB WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power G G D D S S density and high efficiency. And it is very TO-251-L3.5 TO-252 robust and RoHS compliant. TAB TAB... See More ⇒
Detailed specifications: WML4N90D1B, WMM4N90D1B, WMK50N06TS, WMK6N90D1, WML6N90D1, WMM6N90D1, WMK75N03T1, WMK7N65D1B, IRF840, WML7N65D1B, WMO7N65D1B, WMK80N04T1, WMK80N06TS, WMK80N08TS, WMK90N08TS, WMK9N50D1B, WML9N50D1B
Keywords - WMH7N65D1B MOSFET specs
WMH7N65D1B cross reference
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WMH7N65D1B substitution
WMH7N65D1B replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: WMK07N80M3 | WMK119N12LG4 | WMJ28N65F2 | WMK10N65C4
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