All MOSFET. WMH7N65D1B Datasheet

 

WMH7N65D1B Datasheet and Replacement


   Type Designator: WMH7N65D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.4 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO251
 

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WMH7N65D1B Datasheet (PDF)

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WMH7N65D1B

WMK7N65D1B WMH7N65D1BWML7N65D1B WMO7N65D1B650V 7A 1.12 N-ch Power MOSFETDescriptionTO-220 TO-220FTABWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerGGDDSSdensity and high efficiency. And it is veryTO-251-L3.5TO-252robust and RoHS compliant.TABTAB

Datasheet: WML4N90D1B , WMM4N90D1B , WMK50N06TS , WMK6N90D1 , WML6N90D1 , WMM6N90D1 , WMK75N03T1 , WMK7N65D1B , IRF840 , WML7N65D1B , WMO7N65D1B , WMK80N04T1 , WMK80N06TS , WMK80N08TS , WMK90N08TS , WMK9N50D1B , WML9N50D1B .

History: VN0106N2 | STV4N100

Keywords - WMH7N65D1B MOSFET datasheet

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