WML9N50D1B Specs and Replacement
Type Designator: WML9N50D1B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
WML9N50D1B substitution
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WML9N50D1B datasheet
wmk9n50d1b wml9n50d1b wmo9n50d1b.pdf
WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68 N-ch Power MOSFET Description TO-252 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D G And it is very robust and RoHS compliant. S G D S G D S ... See More ⇒
wmj9n90d1b wml9n90d1b.pdf
WMJ9N90D1B WML9N90D1B 900V 9A 0.88 N-ch Power MOSFET Description TO-247 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very G D G S D robust and RoHS compliant. S Features Typ.R =0.88 @V =10V DS(on) GS 100% av... See More ⇒
Detailed specifications: WMH7N65D1B, WML7N65D1B, WMO7N65D1B, WMK80N04T1, WMK80N06TS, WMK80N08TS, WMK90N08TS, WMK9N50D1B, IRF1404, WMO9N50D1B, WML030N06HG4, WML03N80M3, WMN03N80M3, WMM03N80M3, WMO03N80M3, WMP03N80M3, WMK03N80M3
Keywords - WML9N50D1B MOSFET specs
WML9N50D1B cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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