All MOSFET. WML9N50D1B Datasheet

 

WML9N50D1B MOSFET. Datasheet pdf. Equivalent


   Type Designator: WML9N50D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F

 WML9N50D1B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WML9N50D1B Datasheet (PDF)

 ..1. Size:1621K  way-on
 wmk9n50d1b wml9n50d1b wmo9n50d1b.pdf

WML9N50D1B WML9N50D1B

WMK9N50D1B WML9N50D1B WMO9N50D1B 500V 9A 0.68 N-ch Power MOSFET Description TO-252 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D G And it is very robust and RoHS compliant. S G D S G D S

 9.1. Size:1354K  way-on
 wmj9n90d1b wml9n90d1b.pdf

WML9N50D1B WML9N50D1B

WMJ9N90D1B WML9N90D1B900V 9A 0.88 N-ch Power MOSFETDescriptionTO-247 TO-220FWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is very GDGSDrobust and RoHS compliant.SFeatures Typ.R =0.88@V =10VDS(on) GS 100% av

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK1925

 

 
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