WMP06N80M3 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMP06N80M3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.7 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO251
WMP06N80M3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMP06N80M3 Datasheet (PDF)
..1. Size:673K way-on
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