WML071N15HG2 PDF and Equivalents Search

 

WML071N15HG2 Specs and Replacement

Type Designator: WML071N15HG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 272.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 69 nC

tr ⓘ - Rise Time: 19.5 nS

Cossⓘ - Output Capacitance: 392 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm

Package: TO220F

WML071N15HG2 substitution

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WML071N15HG2 datasheet

 ..1. Size:455K  way-on
wml071n15hg2.pdf pdf_icon

WML071N15HG2

WML071N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description WML071N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device GDS is well suited for high efficiency fast switching applications. TO-220F Features V = 150V, I = 120A... See More ⇒

 9.1. Size:731K  way-on
wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdf pdf_icon

WML071N15HG2

WM 2, WMN07N MM07N100C ML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100C MO07N100C N100C2, WM C2 1000V Super Ju MOSFET V 2.0 S unction Power M T Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low... See More ⇒

 9.2. Size:636K  way-on
wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf pdf_icon

WML071N15HG2

WML0 MM07N65C 07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C 07N65C2, WMP07N65C2, WM C2 650 Junction ET 0V 1.0 Super J n Power MOSFE Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25... See More ⇒

 9.3. Size:679K  way-on
wml07n80m3 wmn07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3.pdf pdf_icon

WML071N15HG2

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80M WMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET 0V 1.6 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf... See More ⇒

Detailed specifications: WMK05N80M3 , WML060N10HGS , WML06N80M3 , WMN06N80M3 , WMM06N80M3 , WMO06N80M3 , WMP06N80M3 , WMK06N80M3 , 12N60 , WML07N100C2 , WMN07N100C2 , WMM07N100C2 , WMJ07N100C2 , WMO07N100C2 , WMP07N100C2 , WMK07N100C2 , WML07N105C2 .

History: IXFN40N110Q3 | IXFP18N60X | IPB107N20N3G

Keywords - WML071N15HG2 MOSFET specs

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