Справочник MOSFET. WML071N15HG2

 

WML071N15HG2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WML071N15HG2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 272.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 19.5 ns
   Cossⓘ - Выходная емкость: 392 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0071 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для WML071N15HG2

   - подбор ⓘ MOSFET транзистора по параметрам

 

WML071N15HG2 Datasheet (PDF)

 ..1. Size:455K  way-on
 wml071n15hg2.pdf pdf_icon

WML071N15HG2

WML071N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWML071N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device GDSis well suited for high efficiency fast switching applications.TO-220FFeatures V = 150V, I = 120A

 9.1. Size:731K  way-on
 wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdf pdf_icon

WML071N15HG2

WM 2, WMN07N MM07N100CML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100CMO07N100C N100C2, WM C2 1000V Super Ju MOSFETV 2.0 S unction Power M TDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low

 9.2. Size:636K  way-on
 wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf pdf_icon

WML071N15HG2

WML0 MM07N65C07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C07N65C2, WMP07N65C2, WM C2 650 Junction ET0V 1.0 Super J n Power MOSFEDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

 9.3. Size:679K  way-on
 wml07n80m3 wmn07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3.pdf pdf_icon

WML071N15HG2

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80MWMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET0V 1.6 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMK05N80M3 , WML060N10HGS , WML06N80M3 , WMN06N80M3 , WMM06N80M3 , WMO06N80M3 , WMP06N80M3 , WMK06N80M3 , 4N60 , WML07N100C2 , WMN07N100C2 , WMM07N100C2 , WMJ07N100C2 , WMO07N100C2 , WMP07N100C2 , WMK07N100C2 , WML07N105C2 .

History: SWD055R03VT | WMO07N65C4 | 2SK1796 | STFI13NM60N | HFW50N06 | SE10030A | TK100A10N1

 

 
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