All MOSFET. WML100N07TS Datasheet

 

WML100N07TS Datasheet and Replacement


   Type Designator: WML100N07TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 92 nC
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 271 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO220F
 

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WML100N07TS Datasheet (PDF)

 ..1. Size:588K  way-on
 wml100n07ts.pdf pdf_icon

WML100N07TS

WML100N07TS 70V N-Channel Enhancement Mode Power MOSFET DescriptionWML100N07TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDSFeatures TO-220F V = 70V, I = 65A DS DR

 9.1. Size:1354K  way-on
 wml10n65d1b wmk10n65d1b.pdf pdf_icon

WML100N07TS

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax

 9.2. Size:671K  way-on
 wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf pdf_icon

WML100N07TS

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 9.3. Size:2320K  way-on
 wml10n70d1 wmo10n70d1.pdf pdf_icon

WML100N07TS

WML10N70D1 WMO10N70D1700V 10A 0.88 N-ch Power MOSFETDescriptionTO-220F TO-252WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGrobust and RoHS compliant.G SDSFeatures Typ.R =0.88@V =10VDS(on) GS 1

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Datasheet: WMO08N70EM , WML08N80M3 , WMN08N80M3 , WMM08N80M3 , WMO08N80M3 , WMP08N80M3 , WMK08N80M3 , WML099N10HGS , IRFZ48N , WML10N100C2 , WMN10N100C2 , WMM10N100C2 , WMJ10N100C2 , WMO10N100C2 , WMP10N100C2 , WMK10N100C2 , WML10N105C2 .

Keywords - WML100N07TS MOSFET datasheet

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