Справочник MOSFET. WML100N07TS

 

WML100N07TS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WML100N07TS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 56.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 77 ns
   Cossⓘ - Выходная емкость: 271 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

WML100N07TS Datasheet (PDF)

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WML100N07TS

WML100N07TS 70V N-Channel Enhancement Mode Power MOSFET DescriptionWML100N07TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDSFeatures TO-220F V = 70V, I = 65A DS DR

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WML100N07TS

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax

 9.2. Size:671K  way-on
wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdfpdf_icon

WML100N07TS

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

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wml10n70d1 wmo10n70d1.pdfpdf_icon

WML100N07TS

WML10N70D1 WMO10N70D1700V 10A 0.88 N-ch Power MOSFETDescriptionTO-220F TO-252WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGrobust and RoHS compliant.G SDSFeatures Typ.R =0.88@V =10VDS(on) GS 1

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXFH20N80P | IRFSL4510PBF | NDT6N70 | 2SK2045 | 2SK1359 | IPD50R280CE | MTP4409H8

 

 
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