All MOSFET. FDPF13N50FT Datasheet

 

FDPF13N50FT MOSFET. Datasheet pdf. Equivalent

Type Designator: FDPF13N50FT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm

Package: TO220F

FDPF13N50FT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDPF13N50FT Datasheet (PDF)

1.1. fdp13n50f fdpf13n50ft.pdf Size:625K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

September 2007 UniFETTM FDP13N50F / FDPF13N50FT tm N-Channel MOSFET 500V, 12A, 0.54? Features Description • RDS(on) = 0.42? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 30nC) stripe, DMOS technology. • Low Crss ( Typ. 14.5pF) This advanced technology has been es

5.1. fdpf14n30t.pdf Size:362K _upd-mosfet

FDPF13N50FT
FDPF13N50FT

February 2007 TM UniFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description • 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 18 nC) stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especiall

5.2. fdp15n65 fdpf15n65ydtu.pdf Size:457K _upd-mosfet

FDPF13N50FT
FDPF13N50FT

April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description • 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 48.5 nC) stripe, DMOS technology. • Low Crss ( typical 23.6 pF) This advanced technology has been especia

 5.3. fdpf12n35.pdf Size:427K _upd-mosfet

FDPF13N50FT
FDPF13N50FT

April 2007 TM UniFET FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features Description • 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 18 nC) transistors are produced using Fairchild’s proprietary, planar • Low Crss ( typical 15 pF) stripe, DMOS technology. • Fast switching This advanced technology h

5.4. fdpf12n50nzt.pdf Size:370K _upd-mosfet

FDPF13N50FT
FDPF13N50FT

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS(on) = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 23nC ) stripe, DMOS technology. • Low Crss ( Typ. 14pF ) This advanced tech

 5.5. fdpf18n20f.pdf Size:658K _upd-mosfet

FDPF13N50FT
FDPF13N50FT

September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14Ω Features Description • RDS(on) = 0.12Ω ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 20nC) stripe, DMOS technology. • Low Crss ( Typ. 24pF) This advanced technology h

5.6. fdp15n40 fdpf15n40.pdf Size:250K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

October 2008 UniFETTM FDP15N40 / FDPF15N40 tm N-Channel MOSFET 400V, 15A, 0.3? Features Description • RDS(on) = 0.24? ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 28nC) stripe, DMOS technology. • Low Crss ( Typ. 17pF) This advanced technology has been especial

5.7. fdp12n50 fdpf12n50.pdf Size:446K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

June 2007 UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65? Features Description • RDS(on) = 0.55? (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 22nC) stripe, DMOS technology. • Low Crss ( Typ. 11pF) This advanced technology has been especially

5.8. fdp18n20f fdpf18n20f.pdf Size:685K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14? Features Description • RDS(on) = 0.12? ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 20nC) stripe, DMOS technology. • Low Crss ( Typ. 24pF) This advanced technology has been especia

5.9. fdp15n65 fdpf15n65.pdf Size:490K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description • 15A, 650V, RDS(on) = 0.44? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 48.5 nC) stripe, DMOS technology. • Low Crss ( typical 23.6 pF) This advanced technology has been especially tailored

5.10. fdp12n50nz fdpf12n50nz.pdf Size:377K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52? Features Description • RDS(on) = 0.46? ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 23nC ) stripe, DMOS technology. • Low Crss ( Typ. 14pF ) This advanced technology has be

5.11. fdp12n60nz fdpf12n60nz.pdf Size:284K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

September 2010 UniFET-II TM FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET? 600V, 12A, 0.65? Features Description • RDS(on) = 0.53? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 26nC) DOMS technology. • Low Crss ( Typ. 12pF) This advance technology has been esp

5.12. fdp12n50f fdpf12n50ft.pdf Size:695K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

December 2007 UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7? Features Description • RDS(on) = 0.59? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 21nC) DMOS technology. • Low Crss ( Typ. 11pF) This advance technology has been espe

5.13. fdp10n50u fdpf10n50ut.pdf Size:483K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

November 2009 UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05? Features Description • RDS(on) = 0.85? ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis- tors are p roduced using Fa irchild’s proprietary, planar stripe, • Low Gate Charge ( Typ. 18nC) DMOS technology. • Low Crss ( Typ. 9pF) This advan ce technology has been espec

5.14. fdp16n50 fdpf16n50.pdf Size:464K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

April 2007 TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS(on) = 0.38? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 32 nC) stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to

5.15. fdp10n50f fdpf10n50ft.pdf Size:409K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

January 2009 UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85? Features Description • RDS(on) = 0.71? ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge ( Typ. 18nC) DMOS technology. • Low Crss ( Typ. 10pF) This advance technology has been especial

5.16. fdp18n50 fdpf18n50 fdpf18n50t.pdf Size:870K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

November 2013 FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Features Description • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low

5.17. fdp10n60nz fdpf10n60nz.pdf Size:659K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

November 2013 FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features Description • RDS(on) = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 23 nC) technology. This advanced MOSFET family has the smallest • Low Crss (Typ.

5.18. fdp10n60zu fdpf10n60zut.pdf Size:554K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

April 2009 TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8? Features Description • RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 31nC) stripe, DMOS technology. • Low Crss ( Typ. 15pF) This advance technology has be

5.19. fdpf16n50 fdpf16n50t.pdf Size:1433K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

November 2013 FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET 500 V, 16 A, 380 mΩ Features Description • RDS(on) = 380 mΩ (Max.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (

5.20. fdp12n50u fdpf12n50ut.pdf Size:646K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

November 2007 Ultra FRFETTM FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8? Features Description • RDS(on) = 0.65? ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 21nC) DMOS technology. • Low Crss ( Typ. 11pF) This advance technology has

5.21. fdp18n50 fdpf18n50.pdf Size:466K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

April 2007 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS(on) = 0.265? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 45 nC) stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to

5.22. fdp14n30 fdpf14n30.pdf Size:483K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

February 2007 TM UniFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features Description • 14A, 300V, RDS(on) = 0.29? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 18 nC) stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tailored t

5.23. fdpf190n15a.pdf Size:232K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

April 2011 FDPF190N15A N-Channel PowerTrench® MOSFET 150V, 27.4A, 19mΩ Features Description • RDS(on) = 14.7mΩ ( Typ.)@ VGS = 10V, ID = 27.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been • Low Gate Charge ( Typ. 30nC) especially tailored to minimize the on-state resistance and yet maintain superior switching per

5.24. fdp12n50 fdpf12n50t.pdf Size:535K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

May 2012 UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 22nC) stripe, DMOS technology. • Low Crss ( Typ. 11pF) This advanced technology has be

5.25. fdpf18n20ft g.pdf Size:601K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

April 2013 FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET 200 V, 18 A, 140 m � Features Description UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage • RDS(on) = 129 mΩ (Typ.) @ VGS = 10 V, ID = 9 A MOSFET family based on planar stripe and DMOS technology. This • Low Gate Charge (Typ. 20 nC) MOSFET is tailored to reduce on-state resistance, and to provide bette

5.26. fdp19n40 fdpf19n40.pdf Size:258K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

October UniFETTM FDP19N40 / FDPF19N40 tm N-Channel MOSFET 400V, 19A, 0.24? Features Description • RDS(on) =0.2? ( Typ.)@ VGS = 10V, ID = 9.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 32nC) stripe, DMOS technology. • Low Crss ( Typ. 20pF) This advanced technology has been especially ta

5.27. fdp16n50u fdpf16n50ut.pdf Size:241K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

October 2009 UniFETTM FDP16N50U / FDPF16N50UT tm N-Channel MOSFET, FRFET 500V, 15A, 0.48? Features Description • RDS(on) = 0.37? ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 32nC) DMOS technology. • Low Crss ( Typ. 20pF) This advance technology has been

5.28. fdp17n60n fdpf17n60nt.pdf Size:761K _fairchild_semi

FDPF13N50FT
FDPF13N50FT

July 2009 UniFETTM FDP17N60N / FDPF17N60NT N-Channel MOSFET 600V, 17A, 0.34? Features Description • RDS(on) = 0.29? ( Typ.)@ VGS = 10V, ID = 8.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 48nC) stripe, DMOS technology. • Low Crss ( Typ. 23pF) This advanced technology has been especially

Datasheet: FDPF10N60ZUT , STG8209 , FDPF12N50FT , FDPF12N50NZ , FDPF12N50T , FDPF12N50UT , FDPF12N60NZ , STG8205 , 2SK105 , FDPF14N30 , FDPF15N65 , FDPF16N50 , FDPF16N50T , FDPF16N50UT , FDPF17N60NT , STG2454 , FDPF18N20FT .

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