WMJ10N105C2 PDF Specs and Replacement
Type Designator: WMJ10N105C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1050 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO247
WMJ10N105C2 substitution
WMJ10N105C2 PDF Specs
wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf
WM 2, WMN10N MM10N105C ML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105C MO10N105C N105C2, WM C2 1050V 1.1 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low ga ... See More ⇒
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf
WM 2, WMN10N MM10N100C ML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100C MO10N100C N100C2, WM C2 1000V 1.1 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low ga ... See More ⇒
wmj10n100d1.pdf
WMJ10N100D1 1000V 10A 1.0 N-ch Power MOSFET Description TO-247 WMOSTM D1 is Wayon s 1st generation VDMOS TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S Features V =1050V@T DS jmax Typ.R =1.0 @V =10V DS(on) GS 100%... See More ⇒
wml10n80d1 wmj10n80d1.pdf
WML10N80D1 WMJ10N80D1 800V 10A 0.91 N-ch Power MOSFET Description TO-220F TO-247 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D G S D S Features Typ.R =0.91 @V =10V DS(on) GS ... See More ⇒
Detailed specifications: WMM10N100C2 , WMJ10N100C2 , WMO10N100C2 , WMP10N100C2 , WMK10N100C2 , WML10N105C2 , WMN10N105C2 , WMM10N105C2 , EMB04N03H , WMO10N105C2 , WMP10N105C2 , WMK10N105C2 , WML10N65D1B , WMK10N65D1B , WML10N65EM , WMK10N65EM , WMM10N65EM .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.




