WMJ10N105C2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMJ10N105C2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 86 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1050 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 18.8 nC
trⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 26 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO247
WMJ10N105C2 Datasheet (PDF)
wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf

WM 2, WMN10N MM10N105CML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105CMO10N105C N105C2, WM C2 1050V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf

WM 2, WMN10N MM10N100CML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100CMO10N100C N100C2, WM C2 1000V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga
wmj10n100d1.pdf

WMJ10N100D11000V 10A 1.0 N-ch Power MOSFETDescriptionTO-247WMOSTM D1 is Wayons 1st generation VDMOSTABfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GDSFeatures V =1050V@TDS jmax Typ.R =1.0@V =10VDS(on) GS 100%
wml10n80d1 wmj10n80d1.pdf

WML10N80D1 WMJ10N80D1800V 10A 0.91 N-ch Power MOSFETDescriptionTO-220F TO-247WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDGSDSFeatures Typ.R =0.91@V =10VDS(on) GS
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: FS5AS-06 | RUM002N02 | VS6018AS | DMP2021UFDF | SUN50A20CI | 2SK371 | VS4614AS-A
History: FS5AS-06 | RUM002N02 | VS6018AS | DMP2021UFDF | SUN50A20CI | 2SK371 | VS4614AS-A



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