All MOSFET. WMO10N65EM Datasheet

 

WMO10N65EM Datasheet and Replacement


   Type Designator: WMO10N65EM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO252
 
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WMO10N65EM Datasheet (PDF)

 ..1. Size:659K  way-on
 wml10n65em wmk10n65em wmm10n65em wmn10n65em wmp10n65em wmo10n65em.pdf pdf_icon

WMO10N65EM

WML10 WMK10N60N65EM, W 65EM, WMM10N65EM WMN10 WMP10N60N65EM, W 65EM, WMO10N65EM 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate

 6.1. Size:671K  way-on
 wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf pdf_icon

WMO10N65EM

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 7.1. Size:670K  way-on
 wmm10n60c4 wml10n60c4 wmo10n60c4 wmn10n60c4 wmp10n60c4 wmk10n60c4.pdf pdf_icon

WMO10N65EM

WMM10N60C4, WML10N6 WM C4 60C4, MO10N60CWMN10N60C4, WMP10N6 WM C4 60C4, MK10N60C 600V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM

 8.1. Size:2320K  way-on
 wml10n70d1 wmo10n70d1.pdf pdf_icon

WMO10N65EM

WML10N70D1 WMO10N70D1700V 10A 0.88 N-ch Power MOSFETDescriptionTO-220F TO-252WMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionTABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGrobust and RoHS compliant.G SDSFeatures Typ.R =0.88@V =10VDS(on) GS 1

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Datasheet: WMK10N105C2 , WML10N65D1B , WMK10N65D1B , WML10N65EM , WMK10N65EM , WMM10N65EM , WMN10N65EM , WMP10N65EM , IRF740 , WML10N70D1 , WMO10N70D1 , WML10N70EM , WMK10N70EM , WMM10N70EM , WMN10N70EM , WMP10N70EM , WMO10N70EM .

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