WMJ10N80D1 Specs and Replacement
Type Designator: WMJ10N80D1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 157 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
Package: TO247
WMJ10N80D1 substitution
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WMJ10N80D1 datasheet
wml10n80d1 wmj10n80d1.pdf
WML10N80D1 WMJ10N80D1 800V 10A 0.91 N-ch Power MOSFET Description TO-220F TO-247 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D G S D S Features Typ.R =0.91 @V =10V DS(on) GS ... See More ⇒
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf
WM 2, WMN10N MM10N100C ML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100C MO10N100C N100C2, WM C2 1000V 1.1 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low ga ... See More ⇒
wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf
WM 2, WMN10N MM10N105C ML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105C MO10N105C N105C2, WM C2 1050V 1.1 S T 0 Super Junction Power MOSFET Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low ga ... See More ⇒
wmj10n100d1.pdf
WMJ10N100D1 1000V 10A 1.0 N-ch Power MOSFET Description TO-247 WMOSTM D1 is Wayon s 1st generation VDMOS TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D S Features V =1050V@T DS jmax Typ.R =1.0 @V =10V DS(on) GS 100%... See More ⇒
Detailed specifications: WMO10N70D1, WML10N70EM, WMK10N70EM, WMM10N70EM, WMN10N70EM, WMP10N70EM, WMO10N70EM, WML10N80D1, IRLZ44N, WML10N80M3, WMN10N80M3, WMM10N80M3, WMO10N80M3, WMP10N80M3, WMK10N80M3, WML115N15HG4, WML11N65SR
Keywords - WMJ10N80D1 MOSFET specs
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