WMJ10N80D1 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMJ10N80D1
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 215 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 46 ns
Cossⓘ - Выходная емкость: 157 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.15 Ohm
Тип корпуса: TO247
Аналог (замена) для WMJ10N80D1
WMJ10N80D1 Datasheet (PDF)
wml10n80d1 wmj10n80d1.pdf

WML10N80D1 WMJ10N80D1800V 10A 0.91 N-ch Power MOSFETDescriptionTO-220F TO-247WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDGSDSFeatures Typ.R =0.91@V =10VDS(on) GS
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf

WM 2, WMN10N MM10N100CML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100CMO10N100C N100C2, WM C2 1000V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga
wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf

WM 2, WMN10N MM10N105CML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105CMO10N105C N105C2, WM C2 1050V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga
wmj10n100d1.pdf

WMJ10N100D11000V 10A 1.0 N-ch Power MOSFETDescriptionTO-247WMOSTM D1 is Wayons 1st generation VDMOSTABfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GDSFeatures V =1050V@TDS jmax Typ.R =1.0@V =10VDS(on) GS 100%
Другие MOSFET... WMO10N70D1 , WML10N70EM , WMK10N70EM , WMM10N70EM , WMN10N70EM , WMP10N70EM , WMO10N70EM , WML10N80D1 , IRFP260N , WML10N80M3 , WMN10N80M3 , WMM10N80M3 , WMO10N80M3 , WMP10N80M3 , WMK10N80M3 , WML115N15HG4 , WML11N65SR .
History: NCEP02T10D | 2SK636 | WMO50P04T1 | IPP100N10S3-05 | IPP075N15N3G | R6530KNX1 | WSF40P06
History: NCEP02T10D | 2SK636 | WMO50P04T1 | IPP100N10S3-05 | IPP075N15N3G | R6530KNX1 | WSF40P06



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