WML125N12LG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WML125N12LG2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 8.8 nS
Cossⓘ - Output Capacitance: 235 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: TO220F
WML125N12LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WML125N12LG2 Datasheet (PDF)
wml125n12lg2.pdf
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WML125N12LG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionWML125N12LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GDSFeatures TO-220F V = 120V, I = 35A
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