WML125N12LG2. Аналоги и основные параметры
Наименование производителя: WML125N12LG2
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 30.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 120 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8.8 ns
Cossⓘ - Выходная емкость: 235 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
Тип корпуса: TO220F
Аналог (замена) для WML125N12LG2
- подборⓘ MOSFET транзистора по параметрам
WML125N12LG2 даташит
wml125n12lg2.pdf
WML125N12LG2 120V N-Channel Enhancement Mode Power MOSFET Description WML125N12LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GDS Features TO-220F V = 120V, I = 35A
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