WMO14N65C4 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMO14N65C4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 21.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO252
WMO14N65C4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMO14N65C4 Datasheet (PDF)
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wmo140nv6lg4.pdf
WMO140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This DSdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 50
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