WMO14N65C4 - Даташиты. Аналоги. Основные параметры
Наименование производителя: WMO14N65C4
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 21.5 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: TO252
Аналог (замена) для WMO14N65C4
WMO14N65C4 Datasheet (PDF)
wml14n65c4 wmk14n65c4 wmm14n65c4 wmn14n65c4 wmp14n65c4 wmo14n65c4.pdf

WML1 MM14N65C14N65C4, WMK14N65C4, WM C4 WMN14N65C4, WMP14N65C4, WM C4 MO14N65C 650V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
wml14n60c4 wmk14n60c4 wmm14n60c4 wmn14n60c4 wmp14n60c4 wmo14n60c4.pdf

WML1 MM14N60C14N60C4, WMK14N60C4, WM C4 WMN14N60C4, WMP14N60C4, WM C4 MO14N60C 600V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
wml14n70c4 wmk14n70c4 wmm14n70c4 wmn14n70c4 wmp14n70c4 wmo14n70c4.pdf

WML1 MM14N70C14N70C4, WMK14N70C4, WM C4 WMN14N70C4, WMP14N70C4, WM C4 MO14N70C 700V n Power MOSFETV 0.33 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4
wmo140nv6lg4.pdf

WMO140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMO140NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This DSdevice is well suited for high efficiency fast switching applications. GTO-252Features V = 65V, I = 50
Другие MOSFET... WMN14N60C4 , WMP14N60C4 , WMO14N60C4 , WML14N65C4 , WMK14N65C4 , WMM14N65C4 , WMN14N65C4 , WMP14N65C4 , 8N60 , WML14N70C4 , WMK14N70C4 , WMM14N70C4 , WMN14N70C4 , WMP14N70C4 , WMO14N70C4 , WML15N25T2 , WML15N60C4 .
History: MPSW60M150B | P0660ED | SI2301BDS-T1-GE3 | 2SK3857TV | FHF4N60A | HSM6901 | FXN11N45F
History: MPSW60M150B | P0660ED | SI2301BDS-T1-GE3 | 2SK3857TV | FHF4N60A | HSM6901 | FXN11N45F



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