WMP16N65SR MOSFET. Datasheet pdf. Equivalent
Type Designator: WMP16N65SR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19.5 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 32 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO251
WMP16N65SR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMP16N65SR Datasheet (PDF)
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WML16N65SR, W 65SR, WM SR WMK16N6 MM16N65S WMN16N65SR, WMP16N6 MO16N65S65SR, WM SR 650V 0.31 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge perfo
wml16n70sr wmk16n70sr wmm16n70sr wmn16n70sr wmp16n70sr wmo16n70sr.pdf
WML16N70SR, W 70SR, WM SR WMK16N7 MM16N70S WMN16N70SR, WMP16N7 MO16N70S70SR, WM SR 700V 0.31 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM SR is Wa new generation super ayons w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G Tand low ga charge perfo
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