All MOSFET. WMK25N80M3 Datasheet

 

WMK25N80M3 Datasheet and Replacement


   Type Designator: WMK25N80M3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO220
 

 WMK25N80M3 substitution

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WMK25N80M3 Datasheet (PDF)

 ..1. Size:668K  way-on
wml25n80m3 wmm25n80m3 wmn25n80m3 wmj25n80m3 wmk25n80m3.pdf pdf_icon

WMK25N80M3

WML25N8 MM25N80M80M3, WM M3 WMN2 80M3, WM M3 25N80M3, WMJ25N8 MK25N80M 800V 0.21 S TV Super Junction Power MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga charge performanc WMOSTM

 8.1. Size:677K  way-on
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf pdf_icon

WMK25N80M3

WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50CWMN2 MJ25N50C25N50C4, WMM25N50C4, WM C4 500V 0.125 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 8.2. Size:650K  way-on
wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdf pdf_icon

WMK25N80M3

WML25N6 MK25N65EM W 65EM, WMWMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S0 Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate charge perf

 8.3. Size:1006K  way-on
wmk25n10t1.pdf pdf_icon

WMK25N80M3

WMK25N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SFeatures DGTO-220 V = 100V, I = 25A DS D R

Datasheet: WMK25N70EM , WMN25N70EM , WMM25N70EM , WMJ25N70EM , WML25N80M3 , WMM25N80M3 , WMN25N80M3 , WMJ25N80M3 , IRF1405 , WML26N60F2 , WMO26N60F2 , WMK26N60F2 , WMN26N60F2 , WMM26N60F2 , WMJ26N60F2 , WML26N65F2 , WMO26N65F2 .

History: SSI5N80A | HITK0204MP | FCB20N60F085 | STB9NK60ZD | VN1210N1 | SFG100N10GF | IRFHM8342

Keywords - WMK25N80M3 MOSFET datasheet

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