WMK25N80M3. Аналоги и основные параметры
Наименование производителя: WMK25N80M3
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 62 ns
Cossⓘ - Выходная емкость: 90 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.26 Ohm
Тип корпуса: TO220
Аналог (замена) для WMK25N80M3
- подборⓘ MOSFET транзистора по параметрам
WMK25N80M3 даташит
wml25n80m3 wmm25n80m3 wmn25n80m3 wmj25n80m3 wmk25n80m3.pdf
WML25N8 MM25N80M 80M3, WM M3 WMN2 80M3, WM M3 25N80M3, WMJ25N8 MK25N80M 800V 0.21 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga charge performanc WMOSTM
wml25n50c4 wmo25n50c4 wmk25n50c4 wmn25n50c4 wmm25n50c4 wmj25n50c4.pdf
WML25N50C4, WMO25N5 WM C4 W 50C4, MK25N50C WMN2 MJ25N50C 25N50C4, WMM25N50C4, WM C4 500V 0.125 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low ga charge performanc WMOSTM
wml25n65em wmk25n65em wmn25n65em wmm25n65em wmj25n65em.pdf
WML25N6 MK25N65EM W 65EM, WM WMN25 WMM25N6 MJ25N65EM 5N65EM, W 65EM, WM 650V 0.165 S 0 Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate charge perf
wmk25n10t1.pdf
WMK25N10T1 100V N-Channel Enhancement Mode Power MOSFET Description WMK25N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S Features D G TO-220 V = 100V, I = 25A DS D R
Другие MOSFET... WMK25N70EM , WMN25N70EM , WMM25N70EM , WMJ25N70EM , WML25N80M3 , WMM25N80M3 , WMN25N80M3 , WMJ25N80M3 , IRF830 , WML26N60F2 , WMO26N60F2 , WMK26N60F2 , WMN26N60F2 , WMM26N60F2 , WMJ26N60F2 , WML26N65F2 , WMO26N65F2 .
History: WMJ36N60C4 | WMO16N65SR | 4N60D | WML16N70SR | WMM120N04TS
History: WMJ36N60C4 | WMO16N65SR | 4N60D | WML16N70SR | WMM120N04TS
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Обновления
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