B20N15D Specs and Replacement
Type Designator: B20N15D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 65
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 20
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 140
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095
Ohm
Package:
TO252
-
MOSFET ⓘ Cross-Reference Search
B20N15D datasheet
9.1. Size:174K onsemi
ngtb20n120ihl.pdf 
NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒
9.2. Size:176K onsemi
ngtb20n120lwg.pdf
NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒
9.3. Size:182K onsemi
ngtb20n120ihswg.pdf
NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒
9.4. Size:109K onsemi
ngtb20n120ih.pdf
NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http //onsemi.com Features ... See More ⇒
9.5. Size:109K onsemi
ngtb20n120ihwg.pdf
NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http //onsemi.com Features ... See More ⇒
9.6. Size:181K onsemi
ngtb20n120ihr.pdf
NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well http //onsemi.com suited for resonant or soft switching applica... See More ⇒
9.7. Size:183K onsemi
ngtb20n135ihrwg.pdf
NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒
9.8. Size:183K onsemi
ngtb20n135ihr.pdf
NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli... See More ⇒
9.9. Size:181K onsemi
ngtb20n120ihrwg.pdf
NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well http //onsemi.com suited for resonant or soft switching applica... See More ⇒
9.10. Size:176K onsemi
ngtb20n120l.pdf
NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device ... See More ⇒
9.11. Size:182K onsemi
ngtb20n120ihs.pdf
NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic... See More ⇒
Detailed specifications: WML26N65SR
, WMK26N65SR
, WMN26N65SR
, WMM26N65SR
, WMJ26N65SR
, WML28N50C4
, WMK28N50C4
, WMN28N50C4
, IRF540
, DG4N60
, CS55N25A8R-G
, CS55N25AKR
, WMM28N50C4
, WMJ28N50C4
, WML28N60F2
, WMK28N60F2
, WMN28N60F2
.
Keywords - B20N15D MOSFET specs
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