DG4N60 Specs and Replacement
Type Designator: DG4N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 59 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
DG4N60 substitution
- MOSFET ⓘ Cross-Reference Search
DG4N60 datasheet
Detailed specifications: WMK26N65SR, WMN26N65SR, WMM26N65SR, WMJ26N65SR, WML28N50C4, WMK28N50C4, WMN28N50C4, B20N15D, 50N06, CS55N25A8R-G, CS55N25AKR, WMM28N50C4, WMJ28N50C4, WML28N60F2, WMK28N60F2, WMN28N60F2, WMM28N60F2
Keywords - DG4N60 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: RMN3N5R0DN
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