DG4N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: DG4N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 59 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220 TO262
DG4N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DG4N60 Datasheet (PDF)
..1. Size:1358K 1
dg4n60.pdf
dg4n60.pdf
DG4N60V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N60N
9.1. Size:1254K 1
dg4n65.pdf
dg4n65.pdf
DG4N65V1.0N N-CHANNE ENHANCEMENT MODE MOSFET General Description DG4N65N
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .