CS55N25A8R-G PDF and Equivalents Search

 

CS55N25A8R-G Specs and Replacement

Type Designator: CS55N25A8R-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 179 nS

Cossⓘ - Output Capacitance: 463 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm

Package: TO220

CS55N25A8R-G substitution

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CS55N25A8R-G datasheet

 ..1. Size:470K  wuxi china
 cs55n25a8r-g.pdf pdf_icon

CS55N25A8R-G

Silicon N-Channel Power MOSFET R CS55N25 A8R-G General Description VDSS 250 V CS55N25 A8R-G the silicon N-channel Enhanced ID 55 A PD (TC=25 ) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 69 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 6.1. Size:1086K  wuxi china
 cs55n25akr.pdf pdf_icon

CS55N25A8R-G

Silicon N-Channel Power MOSFET R CS55N25 AKR General Description VDSS 250 V CS55N25 AKR the silicon N-channel Enhanced ID 55 A PD (TC=25 ) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 69 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

 9.1. Size:104K  china
 cs55n10.pdf pdf_icon

CS55N25A8R-G

CS55N10 N PD TC=25 250 W 2 W/ ID VGS=10V,TC=25 55 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W BVDSS VGS=0V,ID=5mA 100 V RDS on VGS=10V,ID=27.5A 0.04 VGS th VDS=VGS,ID=1mA 2.0 4.5 V ... See More ⇒

 9.2. Size:2056K  wuxi china
 cs55n06a4.pdf pdf_icon

CS55N25A8R-G

Silicon N-Channel Power Trench MOSFET R CS55N06 A4 General Description VDSS 60 V CS55N06 A4, the silicon N-channel Enhanced ID 55 A RDS(ON)Typ 10 m VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ... See More ⇒

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Detailed specifications: WMN26N65SR, WMM26N65SR, WMJ26N65SR, WML28N50C4, WMK28N50C4, WMN28N50C4, B20N15D, DG4N60, IRFP460, CS55N25AKR, WMM28N50C4, WMJ28N50C4, WML28N60F2, WMK28N60F2, WMN28N60F2, WMM28N60F2, WMJ28N60F2

Keywords - CS55N25A8R-G MOSFET specs

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