FDPF39N20 Datasheet and Replacement

April 2007TMUniFETFDP39N20 / FDPF39N20200V N-Channel MOSFETFeatures Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 38 nC)stripe, DMOS technology. Low Crss ( typical 57 pF)This advanced technology has been especially

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDPF39N20FEATURESWith TO-220F packagingDrain Source Voltage-: V 200VDSSStatic drain-source on-resistance:RDS(on) 66m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

August 2014FDP39N20 / FDPF39N20N-Channel UniFETTM MOSFET200 V, 39 A, 66 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 66 m (Max.) @ VGS = 10 V, ID = 19.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 38 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5

July 2011FDPF390N15A N-Channel PowerTrench MOSFET 150V, 15A, 40mFeatures Description RDS(on) = 31m ( Typ.)@ VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDPF390N15AFEATURESWith TO-220F packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 40m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2