WMM4N90D1 MOSFET Datasheet: N-Ch, 900V, 4A. Full specification with pinout and replacement list

WMM4N90D1 Specs and Replacement

Type Designator: WMM4N90D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: TO263

WMM4N90D1 substitution

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WMM4N90D1 datasheet

..1. Size:1980K way-on
wml4n90d1 wmk4n90d1 wmm4n90d1.pdf pdf_icon

WML4N90D1 WMK4N90D1 WMM4N90D1 900V 4A 2.9 N-ch Power MOSFET Description TO-220F TO-220 TO-263 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G D S G S D S Features Typ.R =2.9... See More ⇒

0.1. Size:1434K way-on
wmk4n90d1b wml4n90d1b wmm4n90d1b.pdf pdf_icon

WMK4N90D1B WML4N90D1B WMM4N90D1B 900V 4A 1.85 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D And it is very robust and RoHS compliant. G G S D S G D S ... See More ⇒

Detailed specifications: WML36N65F2, WMK36N65F2, WMN36N65F2, WMM36N65F2, WMJ36N65F2, WML4N100D1, WML4N90D1, WMK4N90D1, IRF1407, WML50P04TS, WML53N60C4, WMK53N60C4, WMN53N60C4, WMM53N60C4, WMJ53N60C4, WML53N60F2, WMK53N60F2