FDPF5N50NZ Datasheet. Specs and Replacement

Type Designator: FDPF5N50NZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220F

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FDPF5N50NZ datasheet

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FDPF5N50NZ

March 2010 UniFET-IITM FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5 Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (Typ. 9nC) DMOS technology. Low Crss (Typ. 4pF) This advance technology has b... See More ⇒

 ..2. Size:1763K  onsemi
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FDPF5N50NZ

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 0.1. Size:256K  fairchild semi
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FDPF5N50NZ

February 2010 TM UniFET-II FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET 500V, 4.2A, 1.75 Features Description RDS(on) = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advanc... See More ⇒

 0.2. Size:702K  fairchild semi
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FDPF5N50NZ

February 2010 TM UniFET-II FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET 500V, 3.9A, 2.0 Features Description RDS(on) = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance... See More ⇒

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Detailed specifications: FDPF390N15A, FDPF39N20, STF8234, FDPF3N50NZ, FDPF44N25T, FDPF51N25, FDPF55N06, FDPF5N50FT, 8205A, FDPF5N50NZF, FDPF5N50NZU, FDPF5N50T, FDPF5N50UT, FDPF5N60NZ, STF8204, FDPF680N10T, STF620S

Keywords - FDPF5N50NZ MOSFET specs

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