FDPF5N50NZ Specs and Replacement
Type Designator: FDPF5N50NZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220F
FDPF5N50NZ substitution
FDPF5N50NZ datasheet
fdp5n50nz fdpf5n50nz.pdf
March 2010 UniFET-IITM FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5 Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (Typ. 9nC) DMOS technology. Low Crss (Typ. 4pF) This advance technology has b... See More ⇒
fdp5n50nzf fdpf5n50nzf.pdf
February 2010 TM UniFET-II FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET 500V, 4.2A, 1.75 Features Description RDS(on) = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advanc... See More ⇒
fdp5n50nzu fdpf5n50nzu.pdf
February 2010 TM UniFET-II FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET 500V, 3.9A, 2.0 Features Description RDS(on) = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance... See More ⇒
Detailed specifications: FDPF390N15A , FDPF39N20 , STF8234 , FDPF3N50NZ , FDPF44N25T , FDPF51N25 , FDPF55N06 , FDPF5N50FT , IRF3710 , FDPF5N50NZF , FDPF5N50NZU , FDPF5N50T , FDPF5N50UT , FDPF5N60NZ , STF8204 , FDPF680N10T , STF620S .
History: FDD5614P
Keywords - FDPF5N50NZ MOSFET specs
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