WML7N80D1 PDF and Equivalents Search

 

WML7N80D1 Specs and Replacement

Type Designator: WML7N80D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO220F

WML7N80D1 substitution

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WML7N80D1 datasheet

 ..1. Size:1158K  way-on
 wml7n80d1.pdf pdf_icon

WML7N80D1

WML7N80D1 800V 7A 1.4 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D Features S Typ.R =1.4 @V =10V DS(on) GS 100% avalanche tested... See More ⇒

 9.1. Size:1960K  way-on
 wmk7n65d1b wmh7n65d1b wml7n65d1b wmo7n65d1b.pdf pdf_icon

WML7N80D1

WMK7N65D1B WMH7N65D1B WML7N65D1B WMO7N65D1B 650V 7A 1.12 N-ch Power MOSFET Description TO-220 TO-220F TAB WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power G G D D S S density and high efficiency. And it is very TO-251-L3.5 TO-252 robust and RoHS compliant. TAB TAB... See More ⇒

Detailed specifications: WMM53N65C4, WMJ53N65C4, WML53N65F2, WMK53N65F2, WMN53N65F2, WMM53N65F2, WMJ53N65F2, WML6N100D1, IRFZ46N, WML80R160S, WMK80R160S, WMN80R160S, WMM80R160S, WMJ80R160S, WML80R260S, WMK80R260S, WMN80R260S

Keywords - WML7N80D1 MOSFET specs

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