All MOSFET. WML7N80D1 Datasheet

 

WML7N80D1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WML7N80D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220F

 WML7N80D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WML7N80D1 Datasheet (PDF)

 ..1. Size:1158K  way-on
 wml7n80d1.pdf

WML7N80D1 WML7N80D1

WML7N80D1 800V 7A 1.4 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D Features S Typ.R =1.4@V =10V DS(on) GS 100% avalanche tested

 9.1. Size:1960K  way-on
 wmk7n65d1b wmh7n65d1b wml7n65d1b wmo7n65d1b.pdf

WML7N80D1 WML7N80D1

WMK7N65D1B WMH7N65D1BWML7N65D1B WMO7N65D1B650V 7A 1.12 N-ch Power MOSFETDescriptionTO-220 TO-220FTABWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerGGDDSSdensity and high efficiency. And it is veryTO-251-L3.5TO-252robust and RoHS compliant.TABTAB

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK9506-40B | MEM614 | 2SK555 | FDMS9620S

 

 
Back to Top