All MOSFET. WML7N80D1 Datasheet

 

WML7N80D1 Datasheet and Replacement


   Type Designator: WML7N80D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO220F
 

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WML7N80D1 Datasheet (PDF)

 ..1. Size:1158K  way-on
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WML7N80D1

WML7N80D1 800V 7A 1.4 N-ch Power MOSFET Description TO-220F WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G D Features S Typ.R =1.4@V =10V DS(on) GS 100% avalanche tested

 9.1. Size:1960K  way-on
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WML7N80D1

WMK7N65D1B WMH7N65D1BWML7N65D1B WMO7N65D1B650V 7A 1.12 N-ch Power MOSFETDescriptionTO-220 TO-220FTABWMOSTM D1 is Wayons 1st generationVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerGGDDSSdensity and high efficiency. And it is veryTO-251-L3.5TO-252robust and RoHS compliant.TABTAB

Datasheet: WMM53N65C4 , WMJ53N65C4 , WML53N65F2 , WMK53N65F2 , WMN53N65F2 , WMM53N65F2 , WMJ53N65F2 , WML6N100D1 , STP65NF06 , WML80R160S , WMK80R160S , WMN80R160S , WMM80R160S , WMJ80R160S , WML80R260S , WMK80R260S , WMN80R260S .

History: RP1L055SN | FDC796NF077 | SI2301CDS-T1 | KP8M5

Keywords - WML7N80D1 MOSFET datasheet

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