FDPF5N50NZU PDF and Equivalents Search

 

FDPF5N50NZU Specs and Replacement


   Type Designator: FDPF5N50NZU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220F
 

 FDPF5N50NZU substitution

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FDPF5N50NZU datasheet

 ..1. Size:702K  fairchild semi
fdp5n50nzu fdpf5n50nzu.pdf pdf_icon

FDPF5N50NZU

February 2010 TM UniFET-II FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET 500V, 3.9A, 2.0 Features Description RDS(on) = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance... See More ⇒

 ..2. Size:948K  onsemi
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FDPF5N50NZU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 4.1. Size:247K  fairchild semi
fdp5n50nz fdpf5n50nz.pdf pdf_icon

FDPF5N50NZU

March 2010 UniFET-IITM FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5 Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (Typ. 9nC) DMOS technology. Low Crss (Typ. 4pF) This advance technology has b... See More ⇒

 4.2. Size:256K  fairchild semi
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FDPF5N50NZU

February 2010 TM UniFET-II FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET 500V, 4.2A, 1.75 Features Description RDS(on) = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advanc... See More ⇒

Detailed specifications: STF8234 , FDPF3N50NZ , FDPF44N25T , FDPF51N25 , FDPF55N06 , FDPF5N50FT , FDPF5N50NZ , FDPF5N50NZF , AON6414A , FDPF5N50T , FDPF5N50UT , FDPF5N60NZ , STF8204 , FDPF680N10T , STF620S , FDPF6N60ZUT , STF445 .

Keywords - FDPF5N50NZU MOSFET specs

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