WMLL020N10HGS Specs and Replacement
Type Designator: WMLL020N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 390.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 312 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 88 nS
Cossⓘ - Output Capacitance: 2120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TOLL
WMLL020N10HGS substitution
- MOSFET ⓘ Cross-Reference Search
WMLL020N10HGS datasheet
wmll020n10hgs.pdf
WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
wmll020n10hg4.pdf
WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicat... See More ⇒
wmll020nv8hgs.pdf
WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020NV8HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
wmll020n08hgs.pdf
WMLL020N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
Detailed specifications: WMM90R500S, WMJ90R500S, WMLL010N04LG4, WMLL013N08HGS, WMLL014N06HG4, WMLL017N10HGS, WMLL020N08HGS, WMLL020N10HG4, IRF9540, WMLL020NV8HGS, WMLL025N10HGS, WMLL030N12HGS, WMLL040N15HG2, WMLL065N15HG2, WMLL099N20HG2, WMM015N08HGS, WMM020N06HG4
Keywords - WMLL020N10HGS MOSFET specs
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