WMLL020N10HGS. Аналоги и основные параметры
Наименование производителя: WMLL020N10HGS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 390.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 312 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 88 ns
Cossⓘ - Выходная емкость: 2120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: TOLL
Аналог (замена) для WMLL020N10HGS
- подборⓘ MOSFET транзистора по параметрам
WMLL020N10HGS даташит
wmll020n10hgs.pdf
WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.
wmll020n10hg4.pdf
WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicat
wmll020nv8hgs.pdf
WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020NV8HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.
wmll020n08hgs.pdf
WMLL020N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.
Другие MOSFET... WMM90R500S , WMJ90R500S , WMLL010N04LG4 , WMLL013N08HGS , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , IRF9540 , WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 .
History: 1N60E | WMLL099N20HG2 | IXFA102N15T | MDP18N50TH | RCJ050N25
History: 1N60E | WMLL099N20HG2 | IXFA102N15T | MDP18N50TH | RCJ050N25
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Список транзисторов
Обновления
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
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