WMLL020N10HGS - описание и поиск аналогов

 

WMLL020N10HGS. Аналоги и основные параметры

Наименование производителя: WMLL020N10HGS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 390.6 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 312 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 88 ns

Cossⓘ - Выходная емкость: 2120 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm

Тип корпуса: TOLL

Аналог (замена) для WMLL020N10HGS

- подборⓘ MOSFET транзистора по параметрам

 

WMLL020N10HGS даташит

 ..1. Size:613K  way-on
wmll020n10hgs.pdfpdf_icon

WMLL020N10HGS

WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

 2.1. Size:644K  way-on
wmll020n10hg4.pdfpdf_icon

WMLL020N10HGS

WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicat

 6.1. Size:621K  way-on
wmll020nv8hgs.pdfpdf_icon

WMLL020N10HGS

WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020NV8HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

 6.2. Size:619K  way-on
wmll020n08hgs.pdfpdf_icon

WMLL020N10HGS

WMLL020N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

Другие MOSFET... WMM90R500S , WMJ90R500S , WMLL010N04LG4 , WMLL013N08HGS , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , IRF9540 , WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 .

History: 1N60E | WMLL099N20HG2 | IXFA102N15T | MDP18N50TH | RCJ050N25

 

 

 

 

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