FDPF5N60NZ Specs and Replacement
Type Designator: FDPF5N60NZ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Id| ⓘ - Maximum Drain Current: 4.5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
TO220F
-
MOSFET ⓘ Cross-Reference Search
FDPF5N60NZ datasheet
..1. Size:265K fairchild semi
fdp5n60nz fdpf5n60nz.pdf 
November 2010 TM UniFET-II FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 10nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced techno... See More ⇒
..2. Size:750K onsemi
fdp5n60nz fdpf5n60nz.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
8.1. Size:265K fairchild semi
fdp5n50 fdpf5n50.pdf 
December 2007 UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4 Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has bee... See More ⇒
8.2. Size:247K fairchild semi
fdp5n50nz fdpf5n50nz.pdf 
March 2010 UniFET-IITM FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5 Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (Typ. 9nC) DMOS technology. Low Crss (Typ. 4pF) This advance technology has b... See More ⇒
8.3. Size:580K fairchild semi
fdpf5n50t.pdf 
November 2013 FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, 1.4 Features Description RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 11 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5 pF) provi... See More ⇒
8.4. Size:256K fairchild semi
fdp5n50nzf fdpf5n50nzf.pdf 
February 2010 TM UniFET-II FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET 500V, 4.2A, 1.75 Features Description RDS(on) = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advanc... See More ⇒
8.5. Size:427K fairchild semi
fdp5n50f fdpf5n50ft.pdf 
December 2007 UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55 Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced tech... See More ⇒
8.6. Size:224K fairchild semi
fdp5n50u fdpf5n50ut.pdf 
November2009 TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance tech... See More ⇒
8.7. Size:702K fairchild semi
fdp5n50nzu fdpf5n50nzu.pdf 
February 2010 TM UniFET-II FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET 500V, 3.9A, 2.0 Features Description RDS(on) = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance... See More ⇒
8.8. Size:948K onsemi
fdpf5n50nzu.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
8.10. Size:688K onsemi
fdpf5n50t.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDPF51N25
, FDPF55N06
, FDPF5N50FT
, FDPF5N50NZ
, FDPF5N50NZF
, FDPF5N50NZU
, FDPF5N50T
, FDPF5N50UT
, P55NF06
, STF8204
, FDPF680N10T
, STF620S
, FDPF6N60ZUT
, STF445
, FDPF770N15A
, FDPF7N60NZ
, STF443
.
Keywords - FDPF5N60NZ MOSFET specs
FDPF5N60NZ cross reference
FDPF5N60NZ equivalent finder
FDPF5N60NZ pdf lookup
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.