WMLL040N15HG2 Specs and Replacement
Type Designator: WMLL040N15HG2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 227 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21.4 nS
Cossⓘ -
Output Capacitance: 742 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TOLL
WMLL040N15HG2 substitution
- MOSFET ⓘ Cross-Reference Search
WMLL040N15HG2 datasheet
..1. Size:658K way-on
wmll040n15hg2.pdf 
WMLL040N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description D D WMLL040N15HG2 uses Wayon's 2nd generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicat... See More ⇒
9.1. Size:635K way-on
wmll013n08hgs.pdf 
WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL013N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
9.2. Size:632K way-on
wmll025n10hgs.pdf 
WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL025N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
9.3. Size:634K way-on
wmll014n06hg4.pdf 
WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D WMLL014N06HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati... See More ⇒
9.4. Size:621K way-on
wmll020nv8hgs.pdf 
WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020NV8HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
9.5. Size:613K way-on
wmll020n10hgs.pdf 
WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
9.6. Size:644K way-on
wmll020n10hg4.pdf 
WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicat... See More ⇒
9.7. Size:634K way-on
wmll030n12hgs.pdf 
WMLL030N12HGS 120V N-Channel Enhancement Mode Power MOSFET Description D D WMLL030N12HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
9.8. Size:628K way-on
wmll065n15hg2.pdf 
WMLL065N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description D D WMLL065N15HG2 uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
9.9. Size:608K way-on
wmll010n04lg4.pdf 
WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D WMLL010N04LG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati... See More ⇒
9.10. Size:619K way-on
wmll020n08hgs.pdf 
WMLL020N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
9.11. Size:996K way-on
wmll099n20hg2.pdf 
WMLL099N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description D D WMLL099N20HG2 uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
9.12. Size:615K way-on
wmll017n10hgs.pdf 
WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL017N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications. ... See More ⇒
Detailed specifications: WMLL014N06HG4, WMLL017N10HGS, WMLL020N08HGS, WMLL020N10HG4, WMLL020N10HGS, WMLL020NV8HGS, WMLL025N10HGS, WMLL030N12HGS, 2N7002, WMLL065N15HG2, WMLL099N20HG2, WMM015N08HGS, WMM020N06HG4, WMM020N10HGS, WMM023N08HGS, WMM028N10HG2, WMM028N10HGS
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