Справочник MOSFET. WMLL040N15HG2

 

WMLL040N15HG2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMLL040N15HG2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 227 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 21.4 ns
   Cossⓘ - Выходная емкость: 742 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
   Тип корпуса: TOLL
 

 Аналог (замена) для WMLL040N15HG2

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMLL040N15HG2 Datasheet (PDF)

 ..1. Size:658K  way-on
 wmll040n15hg2.pdf pdf_icon

WMLL040N15HG2

WMLL040N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL040N15HG2 uses Wayon's 2nd generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicat

 9.1. Size:635K  way-on
 wmll013n08hgs.pdf pdf_icon

WMLL040N15HG2

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 9.2. Size:632K  way-on
 wmll025n10hgs.pdf pdf_icon

WMLL040N15HG2

WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL025N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 9.3. Size:634K  way-on
 wmll014n06hg4.pdf pdf_icon

WMLL040N15HG2

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS , WMLL030N12HGS , K4145 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS , WMM023N08HGS , WMM028N10HG2 , WMM028N10HGS .

History: IRFU24N15DPBF | RU30120S | NP90N055NUH | SI4416DY | SST110 | SMG2319P

 

 
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