All MOSFET. WMM040N08HGS Datasheet

 

WMM040N08HGS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMM040N08HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 227.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 985 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO263

 WMM040N08HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMM040N08HGS Datasheet (PDF)

 ..1. Size:489K  way-on
wmm040n08hgs.pdf

WMM040N08HGS
WMM040N08HGS

WMM040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. STO-263Features V = 80V, I = 180A D

 7.1. Size:679K  way-on
wmm040n15hg2.pdf

WMM040N08HGS
WMM040N08HGS

WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =

 9.1. Size:700K  way-on
wmm048nv6hg4.pdf

WMM040N08HGS
WMM040N08HGS

WMM048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMM048NV6HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 65V, I = 11

 9.2. Size:680K  way-on
wmm043n10hgs.pdf

WMM040N08HGS
WMM040N08HGS

WMM043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM043N10HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 145A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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