WMM040N08HGS - аналоги, даташиты, параметры транзистора

WMM040N08HGS Datasheet (PDF)

..1. Size:489K way-on
wmm040n08hgs.pdf pdf_icon

WMM040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. STO-263Features V = 80V, I = 180A D

7.1. Size:679K way-on
wmm040n15hg2.pdf pdf_icon

WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =

9.1. Size:700K way-on
wmm048nv6hg4.pdf pdf_icon

WMM048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMM048NV6HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 65V, I = 11

9.2. Size:680K way-on
wmm043n10hgs.pdf pdf_icon

WMM043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM043N10HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 145A

Другие MOSFET... WMM020N06HG4 , WMM020N10HGS , WMM023N08HGS , WMM028N10HG2 , WMM028N10HGS , WMM030N06HG4 , WMM036N12HGS , WMM037N10HGS , AON7410 , WMM040N15HG2 , WMM043N10HGS , WMM048NV6HG4 , WMM053N10HGS , WMM053NV8HGS , WMM071N15HG2 , WMM07N60C4 , WML07N60C4 .