WMM040N15HG2. Аналоги и основные параметры

Наименование производителя: WMM040N15HG2

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 378.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 21.4 ns

Cossⓘ - Выходная емкость: 742 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0046 Ohm

Тип корпуса: TO263

Аналог (замена) для WMM040N15HG2

- подборⓘ MOSFET транзистора по параметрам

 

WMM040N15HG2 даташит

 ..1. Size:679K  way-on
 wmm040n15hg2.pdf pdf_icon

WMM040N15HG2

WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description WMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 150V, I =

 7.1. Size:489K  way-on
 wmm040n08hgs.pdf pdf_icon

WMM040N15HG2

WMM040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMM040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. S TO-263 Features V = 80V, I = 180A D

 9.1. Size:700K  way-on
 wmm048nv6hg4.pdf pdf_icon

WMM040N15HG2

WMM048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMM048NV6HG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize the G on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. TO-263 Features V = 65V, I = 11

 9.2. Size:680K  way-on
 wmm043n10hgs.pdf pdf_icon

WMM040N15HG2

WMM043N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM043N10HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 145A

ПОКАЗАТЬ ЕЩЁ

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