Справочник MOSFET. WMM040N15HG2

 

WMM040N15HG2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMM040N15HG2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 378.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 200 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 74.3 nC
   trⓘ - Время нарастания: 21.4 ns
   Cossⓘ - Выходная емкость: 742 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0046 Ohm
   Тип корпуса: TO263

 Аналог (замена) для WMM040N15HG2

 

 

WMM040N15HG2 Datasheet (PDF)

 ..1. Size:679K  way-on
 wmm040n15hg2.pdf

WMM040N15HG2 WMM040N15HG2

WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =

 7.1. Size:489K  way-on
 wmm040n08hgs.pdf

WMM040N15HG2 WMM040N15HG2

WMM040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications. STO-263Features V = 80V, I = 180A D

 9.1. Size:700K  way-on
 wmm048nv6hg4.pdf

WMM040N15HG2 WMM040N15HG2

WMM048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionWMM048NV6HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 65V, I = 11

 9.2. Size:680K  way-on
 wmm043n10hgs.pdf

WMM040N15HG2 WMM040N15HG2

WMM043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM043N10HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 145A

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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