WMM040N15HG2 MOSFET Datasheet: N-Ch, 150V, 200A. Full specification with pinout and replacement list

WMM040N15HG2 Specs and Replacement

Type Designator: WMM040N15HG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 378.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.4 nS

Cossⓘ - Output Capacitance: 742 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: TO263

WMM040N15HG2 substitution

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WMM040N15HG2 datasheet

..1. Size:679K way-on
wmm040n15hg2.pdf pdf_icon

WMM040N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description WMM040N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G S device is well suited for high efficiency fast switching applications. TO-263 Features V = 150V, I = ... See More ⇒

7.1. Size:489K way-on
wmm040n08hgs.pdf pdf_icon

WMM040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMM040N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. S TO-263 Features V = 80V, I = 180A D... See More ⇒

9.1. Size:700K way-on
wmm048nv6hg4.pdf pdf_icon

WMM048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMM048NV6HG4 uses Wayon's 4th generation power trench D MOSFET technology that has been especially tailored to minimize the G on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. TO-263 Features V = 65V, I = 11... See More ⇒

9.2. Size:680K way-on
wmm043n10hgs.pdf pdf_icon

WMM043N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM043N10HGS uses Wayon's advanced power trench MOSFET D technology that has been especially tailored to minimize the on-state G resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. TO-263 Features V = 100V, I = 145A ... See More ⇒

Detailed specifications: WMM020N10HGS, WMM023N08HGS, WMM028N10HG2, WMM028N10HGS, WMM030N06HG4, WMM036N12HGS, WMM037N10HGS, WMM040N08HGS, 12N60, WMM043N10HGS, WMM048NV6HG4, WMM053N10HGS, WMM053NV8HGS, WMM071N15HG2, WMM07N60C4, WML07N60C4, WMO07N60C4