WMM053N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM053N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 120A

WMM053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMM053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications.STO-263Features V = 85V, I = 125A DS

WML05N80M3, W 80M3, WM M3 WMN05N8 MM05N80MWMO0 80M3, WM M3 05N80M3, WMP05N8 MK05N80M 800 Junction ET0V 2.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

W 0MM, WMOWMK05N70 O05N70MM WMN05N WMM05N70N70MM, W 0MM, WMP05N70MM 700V 1.2 Z otected Power M TV Zener-pro MOSFETDescripptionWMOSTM MM is Wa new generatio super ayons w on junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM MM is ate charge

WML05N100C2, WMK05N100C2, WMM C2 M05N100CWMN05N WMP05N100C2, WMO C2 N100C2, W O05N100C 1000V 2.6 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D S D G GG D G and low ga charge performanc WMOS

WML05N105C2, WMK05N105C2, WMM C2 M05N105CWMN05N WMP05N105C2, WMO C2 N105C2, W O05N105C 1050V 2.8 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D S D G GG D G and low ga charge performanc WMOS