WMM053N10HGS Datasheet and Replacement
Type Designator: WMM053N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 164.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12.8 nS
Cossⓘ - Output Capacitance: 662 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO263
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WMM053N10HGS Datasheet (PDF)
wmm053n10hgs.pdf

WMM053N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM053N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 120A
wmm053nv8hgs.pdf

WMM053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionWMM053NV8HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications.STO-263Features V = 85V, I = 125A DS
wml05n80m3 wmn05n80m3 wmm05n80m3 wmo05n80m3 wmp05n80m3 wmk05n80m3.pdf

WML05N80M3, W 80M3, WM M3 WMN05N8 MM05N80MWMO0 80M3, WM M3 05N80M3, WMP05N8 MK05N80M 800 Junction ET0V 2.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf
wmk05n70mm wmo05n70mm wmn05n70mm wmm05n70mm wmp05n70mm.pdf

W 0MM, WMOWMK05N70 O05N70MM WMN05N WMM05N70N70MM, W 0MM, WMP05N70MM 700V 1.2 Z otected Power M TV Zener-pro MOSFETDescripptionWMOSTM MM is Wa new generatio super ayons w on junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM MM is ate charge
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FCPF7N60YDTU | SM6A12NSFP | AP6679GI-HF | SPD04N60S5
Keywords - WMM053N10HGS MOSFET datasheet
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History: FCPF7N60YDTU | SM6A12NSFP | AP6679GI-HF | SPD04N60S5



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