STF620S Datasheet. Specs and Replacement

Type Designator: STF620S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO220F

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STF620S datasheet

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STF620S

Green Product STF620S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 75 @ VGS=10V TO-220F Package. 60V 12A 105 @ VGS=4.5V D G G D S STF SERIES TO-220F S (TC=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATING... See More ⇒

Detailed specifications: FDPF5N50NZ, FDPF5N50NZF, FDPF5N50NZU, FDPF5N50T, FDPF5N50UT, FDPF5N60NZ, STF8204, FDPF680N10T, IRF630, FDPF6N60ZUT, STF445, FDPF770N15A, FDPF7N60NZ, STF443, FDPF8N50NZ, FDPF8N50NZF, FDPF8N50NZU

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