WMO10N60C4 Datasheet. Specs and Replacement

Type Designator: WMO10N60C4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO252

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WMO10N60C4 substitution

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WMO10N60C4 datasheet

 ..1. Size:670K  way-on
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WMO10N60C4

WMM10N60C4, WML10N6 WM C4 60C4, MO10N60C WMN10N60C4, WMP10N6 WM C4 60C4, MK10N60C 600V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM... See More ⇒

 7.1. Size:671K  way-on
 wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf pdf_icon

WMO10N60C4

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65C WMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM... See More ⇒

 7.2. Size:659K  way-on
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WMO10N60C4

WML10 WMK10N6 0N65EM, W 65EM, WMM10N65EM WMN10 WMP10N6 0N65EM, W 65EM, WMO10N65EM 650V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate ... See More ⇒

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WMO10N60C4

WML10N70D1 WMO10N70D1 700V 10A 0.88 N-ch Power MOSFET Description TO-220F TO-252 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G S D S Features Typ.R =0.88 @V =10V DS(on) GS 1... See More ⇒

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Detailed specifications: WMM08N70C4, WML08N70C4, WMO08N70C4, WMN08N70C4, WMP08N70C4, WMK08N70C4, WMM10N60C4, WML10N60C4, IRF520, WMN10N60C4, WMP10N60C4, WMK10N60C4, WMM10N65C4, WML10N65C4, WMO10N65C4, WMN10N65C4, WMP10N65C4

Keywords - WMO10N60C4 MOSFET specs

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