FDPF770N15A PDF and Equivalents Search

 

FDPF770N15A Specs and Replacement

Type Designator: FDPF770N15A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm

Package: TO220F

FDPF770N15A substitution

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FDPF770N15A datasheet

 ..1. Size:755K  onsemi
fdpf770n15a.pdf pdf_icon

FDPF770N15A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..2. Size:273K  inchange semiconductor
fdpf770n15a.pdf pdf_icon

FDPF770N15A

isc N-Channel MOSFET Transistor FDPF770N15A FEATURES With TO-220F packaging Drain Source Voltage- V 150V DSS Static drain-source on-resistance RDS(on) 77m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

 9.1. Size:1019K  fairchild semi
fdp7n50 fdpf7n50.pdf pdf_icon

FDPF770N15A

April 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo... See More ⇒

 9.2. Size:375K  fairchild semi
fdpf7n50 fdpf7n50f.pdf pdf_icon

FDPF770N15A

March 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo... See More ⇒

Detailed specifications: FDPF5N50T, FDPF5N50UT, FDPF5N60NZ, STF8204, FDPF680N10T, STF620S, FDPF6N60ZUT, STF445, AON7408, FDPF7N60NZ, STF443, FDPF8N50NZ, FDPF8N50NZF, FDPF8N50NZU, FDPF8N60ZUT, STF2459A, FDQ7236AS

Keywords - FDPF770N15A MOSFET specs

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