FDPF770N15A. Аналоги и основные параметры
Наименование производителя: FDPF770N15A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.077 Ohm
Тип корпуса: TO220F
Аналог (замена) для FDPF770N15A
- подборⓘ MOSFET транзистора по параметрам
FDPF770N15A даташит
fdpf770n15a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdpf770n15a.pdf
isc N-Channel MOSFET Transistor FDPF770N15A FEATURES With TO-220F packaging Drain Source Voltage- V 150V DSS Static drain-source on-resistance RDS(on) 77m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2
fdp7n50 fdpf7n50.pdf
April 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo
fdpf7n50 fdpf7n50f.pdf
March 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo
Другие MOSFET... FDPF5N50T , FDPF5N50UT , FDPF5N60NZ , STF8204 , FDPF680N10T , STF620S , FDPF6N60ZUT , STF445 , AON7408 , FDPF7N60NZ , STF443 , FDPF8N50NZ , FDPF8N50NZF , FDPF8N50NZU , FDPF8N60ZUT , STF2459A , FDQ7236AS .
History: FDP8443F085
History: FDP8443F085
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