WMM120P06TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMM120P06TS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 183.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 84 nC
trⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 955 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO263
WMM120P06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMM120P06TS Datasheet (PDF)
wmm120p06ts.pdf
WMM120P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMM120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. GSFeatures TO-263 V = -60V, I = -120A DS DR
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WMM120N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMM120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. GSFeatures TO-263 V = 40V, I = 170A DS DR
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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
