WMM120P06TS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMM120P06TS
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 183.8 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 84 nC
Время нарастания (tr): 3.5 ns
Выходная емкость (Cd): 955 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0068 Ohm
Тип корпуса: TO263
Аналог (замена) для WMM120P06TS
WMM120P06TS Datasheet (PDF)
wmm120p06ts.pdf
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WMM120P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMM120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. GSFeatures TO-263 V = -60V, I = -120A DS DR
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WMM120N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMM120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. GSFeatures TO-263 V = 40V, I = 170A DS DR
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